8th International Topical SPARC Workshop
and SPARC Lecture Days
Moscow, September 5-10, 2011 -
Information

Title:	Mr.
Family Name:	Adnan
First Name:	Muhammad
Gender:	male
E-Mail:	sardaradnan1gmail.com
Affiliation for Badge:	NCP ISLAMAABDAD PAKISTAN
Institute:	HAZARA UNIVERSITY MANSHEREA PAKISTAN
Address (Street):	HOUSE NO CB 190 LINK ROAD NARRIAN ABBOTTABAD PAKISTAN
Postal Code, City:	22010
Country:	Pakistan
Phone:	+923145002902
Fax:
Arrival Date:	September 5
Departure Date:	September 10
Type of Participation:	Student
Are you a member of the SPARC collaboration ?:	No
I register for:	Both
	Selected
Contribution Type:	Poster
Author(s):	MUAHAMMAD ADNAN SAFDAR
Institute(s):	HAZARA UNIVERSITY MANHSERA PAKISTAN
Title:	Determination of incorporated Elements and Impurities in Nanocrystalline Diamond Films Using 5-UDH Pelletron Tandem Accelerator and Analysis System
Abstract:	Abstract The as deposited diamond nanorods (DNRs) were analyzed using Pelletron Tandem accelerator and analysis system. The as deposited samples contained different content of nitrogen. The variation in nitrogen content is made during the deposition in Microwave Plasma Chemical Vapor Deposition (MPCVD) system. Scanning electron microscopy (SEM) images show no considerable variations in the morphology of nanocrystallites by increasing nitrogen from 0 to 20%. Raman spectroscopic studies were performed on the samples. We observed that diamond peak is at 1332 cm−1 for the samples with 5 % of N2, but it is overlapped with D band (disordered carbon band) for the sample with 20 % N2. The increase in the nitrogen content during the synthesis resulted in an increase in the quantity of the sp2-bonded carbon. We found the concentration of incorporated nitrogen in DNRs film with 0 %, 5 % and 20 % by using Non Rutherford backscattering spectroscopy (Non-RBS) using proton ion beam. Backscattered spectrum of sample collected using standard RBS conditions did not indicate any signal of carbon and nitrogen. It is due to the reason that RBS sensitivity is low for light element on heavier substrate so no observable signals of carbon were found on silicon substrate. Experiments performed for Non-RBS shows prominent peak of carbon for all three samples and signal of nitrogen for a standard sample (having known content of nitrogen). Concentrations of carbon layer deposited on the silicon substrate for all three samples (number of carbon atoms/cm2) were determined both from calculation and

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